Methods and systems for point of use removal of sacrificial material

Patent metadata

Field	Value
Publication number	US-9080968-B2
Application number	US-201313734696-A
Country	US
Kind code	B2
Filing date	Jan 4, 2013
Priority date	Jan 4, 2013
Publication date	Jul 14, 2015
Grant date	Jul 14, 2015

Abstract

A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric layer over the chemFETs in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing surfaces of the chemFETs, and removing the protective layer. The method further includes, etching the dielectric layer and the protective layer together to form cavities corresponding to sensing surfaces of the chemFETs. The protective layer is at least one of a polymer, photoresist material, noble metal, copper oxide, and zinc oxide. The protective layer is removed using at least one of sodium hydroxide, organic solvent, aqua regia, ammonium carbonate, hydrochloric acid, acetic acid, and phosphoric acid.

First claim

The invention claimed is:

1. A sensor, comprising:
an array of chemically-sensitive field effect transistors (chemFETs), each chemFET in the array having a floating gate structure including an upper surface;
a dielectric layer over the upper surfaces of the floating gate structures of the chemFETs in the array, the dielectric layer including cavities extending to the upper surfaces of the floating gate structures and corresponding to sensing surfaces of the chemFETs;
a conform…

Assignees

• Life Technologies Corp

Inventors

• Inman Christina
• Mastroianni Alexander
• Hinz Wolfgang
• Li Shifeng
• Benson Scott

Classifications

• H10P50/73

  Electricity · mapped topic

• H10P50/282 Primary

  Electricity · mapped topic

• G01N27/4145 Primary

  Physics · mapped topic