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Method and apparatus for angular high density plasma chemical vapor deposition
US9080239B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9080239-B2 |
| Application number | US-201213434934-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 30, 2012 |
| Priority date | Aug 4, 2008 |
| Publication date | Jul 14, 2015 |
| Grant date | Jul 14, 2015 |
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Abstract
Official abstract text for this publication.
Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second of the STI trenches; for the capacitor, implanting a second cell well having a second polarity in an area of a third of the STI trenches; removing dielectric material from the third STI trench; forming a gate stack having a first portion located between the first and the second of the STI trenches and a second portion located over and extending into the third trench; and performing a source/drain implant of the same polarity as the second cell well, thereby forming a FET in the first cell well, and a capacitor in the second cell well. The second polarity may be opposite from the first polarity. An additional implant may reduce ESR in the second cell well.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for fabricating a trench structure in a semiconductor, the method comprising: providing a semiconductor substrate having at least one trench structure formed therein; positioning the substrate within an angular deposition tool, wherein the substrate is placed on a pedestal, and wherein the pedestal has an adjustable tilt; positioning the pedestal at an angle with respect to the deposition direction; performing an electron filtering operation t…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- C23C16/345Primary
Chemistry & Metallurgy · mapped topic
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- What does patent US9080239B2 cover?
- Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second of the STI trenches; for the capacitor, implanting a second cell well having a second polarity in an area of a third of the STI trenches; removing dielectric material from the third STI trench; formin…
- Who is the assignee on this patent?
- Yang Daewon, Cheng Kangguo, Smetana Pavel, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification C23C16/345. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jul 14 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).