Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device

Patent metadata

Field	Value
Publication number	US-9075320-B2
Application number	US-201314042765-A
Country	US
Kind code	B2
Filing date	Oct 1, 2013
Priority date	Dec 17, 2010
Publication date	Jul 7, 2015
Grant date	Jul 7, 2015

Abstract

A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF excimer laser exposure light is disclosed. The mask blank has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has an at least two-layer structure including a lower layer and an upper layer from the transparent substrate side. The lower layer is made of a material composed of a transition metal, silicon, and nitrogen and having a nitrogen content of 21 at % or more and a refractive index n of 1.9 or less. The upper layer is made of a material composed of a transition metal, silicon, and nitrogen and having a refractive index n of 2.1 or less. A surface layer of the upper layer contains oxygen and has a nitrogen content of 14 at % or more.

First claim

What is claimed is:

1. A mask blank adapted to manufacture a transfer mask applied with ArF excimer laser exposure light, comprising:
a transparent substrate; and
a light-shielding film formed on the transparent substrate, the light-shielding film serving to form a transfer pattern;
wherein the light-shielding film has an at least two-layer structure comprising a lower layer and an upper layer from a side of the transparent substrate,
the lower layer contains a transition me…

Assignees

• Hoya Corp

Inventors

• Kominato Atsushi
• Hashimoto Masahiro
• Iwashita Hiroyuki

Classifications

• G03F1/00

  Physics · mapped topic

• G03F1/50 Primary

  Physics · mapped topic

• G03F1/74

  Physics · mapped topic

• G03F7/2006

  Physics · mapped topic

• G03F1/58

  Physics · mapped topic