Magnetoresistive effect element and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9070866-B2
Application number	US-201313961805-A
Country	US
Kind code	B2
Filing date	Aug 7, 2013
Priority date	Mar 22, 2013
Publication date	Jun 30, 2015
Grant date	Jun 30, 2015

Abstract

According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the tunnel barrier layer. The tunnel barrier includes a nonmagnetic oxide having a spinel structure. Oxides forming the spinel structure are combined such that a single phase is formed by a solid phase in a component ratio region including a component ratio corresponding to the spinel structure and having a width of not less than 2%.

First claim

What is claimed is:

1. A magnetoresistive effect element comprising:
a first ferromagnetic layer;
a tunnel barrier formed on the first ferromagnetic layer; and
a second ferromagnetic layer formed on the tunnel barrier layer,
wherein the tunnel barrier includes a nonmagnetic oxide having a spinel structure,
wherein the tunnel barrier includes one material selected from the group consisting of MgTi 2 O 4 , MnAl 2 O 4 , and CuMn 2 O 4 , and
wherein the first ferromagnetic l…

Assignees

• Toshiba Kk

Inventors

• Nagamine Makoto
• Ikeno Daisuke
• Nishiyama Katsuya
• Natori Katsuaki
• Yamakawa Koji

Classifications

• H10N50/85 Primary

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic

• H01L43/10 Primary

  Electricity · mapped topic

• H10N50/01

  Electricity · mapped topic