Phase-change memory cell with mixed-material switchable region
US-2024196766-A1 · Jun 13, 2024 · US
US9070858B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070858-B2 |
| Application number | US-201213422100-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 16, 2012 |
| Priority date | Mar 16, 2012 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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Embodiments disclosed herein may relate to forming an interface between a selector transistor and a phase change material storage cell in a memory device.
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The invention claimed is: 1. A method, comprising: forming a phase change material on an emitter region of a selector transistor, the phase change material to be in substantially direct contact with the emitter region of the selector transistor, wherein an interface between the phase change material and the emitter region does not include a silicide. 2. The method of claim 1 , wherein the interface has a higher resistance than a similar interface having a si…
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