Method, system, and device for storage cell, such as for memory

US9070858B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9070858-B2
Application numberUS-201213422100-A
CountryUS
Kind codeB2
Filing dateMar 16, 2012
Priority dateMar 16, 2012
Publication dateJun 30, 2015
Grant dateJun 30, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

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Embodiments disclosed herein may relate to forming an interface between a selector transistor and a phase change material storage cell in a memory device.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method, comprising: forming a phase change material on an emitter region of a selector transistor, the phase change material to be in substantially direct contact with the emitter region of the selector transistor, wherein an interface between the phase change material and the emitter region does not include a silicide. 2. The method of claim 1 , wherein the interface has a higher resistance than a similar interface having a si…

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Frequently asked questions

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What does patent US9070858B2 cover?
Embodiments disclosed herein may relate to forming an interface between a selector transistor and a phase change material storage cell in a memory device.
Who is the assignee on this patent?
Pirovano Agostino, Micron Technology Inc
What technology area does this patent fall under?
Primary CPC classification H01L45/06. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 30 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).