Techniques for patterning multilayer magnetic memory devices using ion implantation

Patent metadata

Field	Value
Publication number	US-9070854-B2
Application number	US-201313861017-A
Country	US
Kind code	B2
Filing date	Apr 11, 2013
Priority date	Apr 27, 2012
Publication date	Jun 30, 2015
Grant date	Jun 30, 2015

Abstract

A method of patterning a substrate includes providing a layer stack comprising a plurality of layers on a base portion of the substrate, where the layer stack includes an electrically conductive layer and a magnetic layer. The method further includes forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, and directing ions towards the layer stack to magnetically isolate and electrically isolate the first protected region from the second protected region.

First claim

What is claimed is:

1. A method of patterning a substrate comprising:
providing a layer stack comprising a plurality of layers on a base portion of the substrate, the layer stack comprising a plurality of initially electrically conductive layers and a magnetic layer;
forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, wherein the first…

Assignees

• Varian Semiconductor Equipment

Inventors

• Hautala John J

Classifications

• H01L43/02 Primary

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic

• H01L27/222

  Electricity · mapped topic

• G11C11/161 Primary

  Physics · mapped topic

• H10N50/01 Primary

  Electricity · mapped topic