Semiconductor light emitting device and method for manufacturing same

US9070841B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9070841-B2
Application numberUS-201313780678-A
CountryUS
Kind codeB2
Filing dateFeb 28, 2013
Priority dateNov 22, 2012
Publication dateJun 30, 2015
Grant dateJun 30, 2015

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  2. Abstract

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Abstract

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According to one embodiment, a semiconductor light emitting device includes: a stacked body, a wavelength conversion layer, a first metal layer, and a first insulating section. The stacked body includes: a first and a second semiconductor layers; and a first light emitting layer provided between the first and the second semiconductor layers. The wavelength conversion layer is configured to convert wavelength of light emitted from the first light emitting layer. The first semiconductor layer is placed between the first light emitting layer and the wavelength conversion layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating section is provided between a first side surface and a first side surface portion of the first metal layer and between the wavelength conversion layer and the first side surface portion.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor light emitting device comprising: a stacked body including: a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, the second semiconductor layer being separated from the first semiconductor layer in a first direction, and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer having a…

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What does patent US9070841B2 cover?
According to one embodiment, a semiconductor light emitting device includes: a stacked body, a wavelength conversion layer, a first metal layer, and a first insulating section. The stacked body includes: a first and a second semiconductor layers; and a first light emitting layer provided between the first and the second semiconductor layers. The wavelength conversion layer is configured to conv…
Who is the assignee on this patent?
Toshiba Kk
What technology area does this patent fall under?
Primary CPC classification H10H20/8585. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 30 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).