Light-emitting element package and lighting device having same
US-2024313188-A1 · Sep 19, 2024 · US
US9070841B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070841-B2 |
| Application number | US-201313780678-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 28, 2013 |
| Priority date | Nov 22, 2012 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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According to one embodiment, a semiconductor light emitting device includes: a stacked body, a wavelength conversion layer, a first metal layer, and a first insulating section. The stacked body includes: a first and a second semiconductor layers; and a first light emitting layer provided between the first and the second semiconductor layers. The wavelength conversion layer is configured to convert wavelength of light emitted from the first light emitting layer. The first semiconductor layer is placed between the first light emitting layer and the wavelength conversion layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating section is provided between a first side surface and a first side surface portion of the first metal layer and between the wavelength conversion layer and the first side surface portion.
Opening claim text (preview).
What is claimed is: 1. A semiconductor light emitting device comprising: a stacked body including: a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, the second semiconductor layer being separated from the first semiconductor layer in a first direction, and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer having a…
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