Semiconductor light-emitting device

Patent metadata

Field	Value
Publication number	US-9070836-B2
Application number	US-201213712194-A
Country	US
Kind code	B2
Filing date	Dec 12, 2012
Priority date	Dec 16, 2011
Publication date	Jun 30, 2015
Grant date	Jun 30, 2015

Abstract

A semiconductor light-emitting device includes a lamination of semiconductor layers including a first layer of a first conductivity type, an active layer, and a second layer of a second conductivity type; a transparent conductive film formed on a principal surface of the lamination and having an opening; a pad electrode formed on part the opening; and a wiring electrode connected with the pad electrode, formed on another part of the opening while partially overlapping the transparent conductive film; wherein contact resistance between the transparent conductive film and the lamination is larger than contact resistance between the wiring electrode and the lamination. Field concentration at the wiring electrode upon application of high voltage is mitigated by the overlapping transparent conductive film.

First claim

What are claimed are:

1. A semiconductor light-emitting device comprising:
a lamination of semiconductor layers including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the active layer;
a transparent conductive film formed on a first principal surface of the lamination of semiconductor layers and having an opening, wherein the opening incl…

Assignees

• Stanley Electric Co Ltd

Inventors

• Nihei Noriko
• Chinone Takako

Classifications

• H10H20/831

  Electricity · mapped topic

• H10H20/816

  Electricity · mapped topic

• H10H20/032

  Electricity · mapped topic

• H10H20/01

  Electricity · mapped topic

• H10H20/833 Primary

  Electricity · mapped topic