Annealing for damage free laser processing for high efficiency solar cells
US-9214585-B2 · Dec 15, 2015 · US
Method for heat-treating a silicon substrate for the production of photovoltaic cells, and photovoltaic cell production method
US9070820B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070820-B2 |
| Application number | US-201013514836-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 8, 2010 |
| Priority date | Dec 10, 2009 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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Abstract
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The invention relates to a method for treating a silicon substrate for the production of photovoltaic cells against reduction in yield during the illumination of said photovoltaic cells. The invention also relates to a method for producing photovoltaic cells from the treated substrate. To said end, the invention relates to a method for treating a silicon substrate for the production of photovoltaic cells, said method including the following steps: a) providing a silicon substrate obtained from a metallurgically purified load, and b) annealing said substrate by heating the substrate to a temperature between 880° C. and 930° C. for a duration of between one and four hours, preferably at a temperature of 900° C., give or take 10° C., for two hours, give or take 10 minutes.
First claim
Opening claim text (preview).
The invention claimed is: 1. A process for treating a silicon substrate for manufacturing photovottaic cells, comprising the following steps: a) providing a silicon substrate obtained from a metallurgically purified feedstock; b) annealing this substrate by heating it to a temperature of between 880° C. and 930° C. for a time of between one and four hours, in which the substrate provided in step a) has a total carbon content of between 2×10 18 cm −3 and 10 19 cm −3 .…
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Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
- H10F71/128Primary
Electricity · mapped topic
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
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Frequently asked questions
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- What does patent US9070820B2 cover?
- The invention relates to a method for treating a silicon substrate for the production of photovoltaic cells against reduction in yield during the illumination of said photovoltaic cells. The invention also relates to a method for producing photovoltaic cells from the treated substrate. To said end, the invention relates to a method for treating a silicon substrate for the production of photovol…
- Who is the assignee on this patent?
- Dubois Sebastien, Enjalbert Nicolas, Commissariat Energie Atomique
- What technology area does this patent fall under?
- Primary CPC classification H10F71/128. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 30 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).