Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
US-2015380237-A1 · Dec 31, 2015 · US
US9070814B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070814-B2 |
| Application number | US-201414314516-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 25, 2014 |
| Priority date | Aug 6, 2010 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.
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The invention claimed is: 1. A sapphire substrate having a principle surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device, the sapphire substrate comprising: a plurality of groupings of projections, each grouping including exactly three sub-groupings, each sub-grouping being discontinuous from each other sub-grouping, the plurality of sub-groupings including: a first sub-grouping on a first side of the grouping, the first sub-grouping…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Electricity · mapped topic
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