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Semiconductor device channels
US9070751B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070751-B2 |
| Application number | US-201313835429-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 15, 2013 |
| Priority date | Mar 12, 2013 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers having channels adapted to carry signals or deliver power. The semiconductor device may include at least two channels having a substantially equivalent cross-sectional area. Conductors in separate channels may have different cross-sectional areas. A spacer dielectric on a side of a channel may be included. The method of manufacture includes establishing a signal conductor layer including a first channel and a second channel having a substantially equivalent cross-sectional area, introducing a spacer dielectric on a side of the second channel, introducing a first conductor in the first channel having a first cross-sectional area, and introducing a second conductor in the second channel having a second cross-sectional area where the second cross-sectional area is smaller than the first cross-sectional area.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a semiconductor device, comprising: establishing a signal conductor layer formed of an insulating material and channels, the signal conductor layer having: a first channel and a second channel, the first channel and the second channel having a substantially equivalent cross-sectional area, and the insulating material bordering at least three edges of the first channel and bordering at least three edges of the second channel;…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10W20/495Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9070751B2 cover?
- A semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers having channels adapted to carry signals or deliver power. The semiconductor device may include at least two channels having a substantially equivalent cross-sectional area. Conductors in separate channels may have different cross-sectional areas. A spacer dielectric on a side o…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10W20/495. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 30 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).