Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
Semiconductor device and method of manufacturing semiconductor device
US9070643B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070643-B2 |
| Application number | US-201213468457-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 10, 2012 |
| Priority date | May 24, 2011 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device including: a base material portion that includes a semiconductor substrate and an insulating film that is formed on one face of the semiconductor substrate and on which a vertical hole is formed along the thickness direction of the semiconductor substrate; a vertical hole wiring portion that includes a vertical hole electrode formed on a side wall of the base material portion that forms the vertical hole; a metallic film that is formed within the insulating film and that is electrically connected to the vertical hole wiring portion; and a conductive protective film that is formed to be in contact with the metallic film within the insulating film and that is formed in a region that includes a contact region of a probe during a probe test that is performed in the middle of manufacture on a film face of the metallic film.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a semiconductor device comprising: forming a metallic film inside an insulating film of a base material portion that includes a semiconductor substrate and the insulating film which is formed on one face of the semiconductor substrate; forming a conductive protective film to be in physical contact with the metallic film within a predetermined region that is within the insulating film and within a film face of the metallic film, wh…
Assignees
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9070643B2 cover?
- A semiconductor device including: a base material portion that includes a semiconductor substrate and an insulating film that is formed on one face of the semiconductor substrate and on which a vertical hole is formed along the thickness direction of the semiconductor substrate; a vertical hole wiring portion that includes a vertical hole electrode formed on a side wall of the base material por…
- Who is the assignee on this patent?
- Nagata Masaya, Sony Corp
- What technology area does this patent fall under?
- Primary CPC classification H10W20/20. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 30 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).