Shrinkage of critical dimensions in a semiconductor device by selective growth of a mask material

Patent metadata

Field	Value
Publication number	US-9070639-B2
Application number	US-201113069488-A
Country	US
Kind code	B2
Filing date	Mar 23, 2011
Priority date	Mar 23, 2011
Publication date	Jun 30, 2015
Grant date	Jun 30, 2015

Abstract

In sophisticated semiconductor devices, manufacturing techniques and etch masks may be formed on the basis of a mask layer stack which comprises an additional mask layer, which may receive an opening on the basis of lithography techniques. Thereafter, the width of the mask opening may be reduced by applying a selective deposition or growth process, which thus results in a highly uniform and well-controllable adjustment of the target width of the etch mask prior to performing the actual patterning process, for instance for forming sophisticated contact openings, via openings and the like.

First claim

What is claimed:

1. A method of forming an etch mask above a semiconductor device, the method comprising:
forming an opening in a mask layer formed above at least one further mask layer and a material layer to be patterned, said opening extending through said mask layer and exposing a surface of a first layer formed below said mask layer;
performing a selective deposition process by initiating selective growth of material on an exposed sidewall surface of said mask layer so as t…

Assignees

• Chumakov Dmytro
• Grimm Volker
• Globalfoundries Inc

Inventors

• Chumakov Dmytro
• Grimm Volker

Classifications

• H10P76/4088

  Electricity · mapped topic

• H10P76/4085

  Electricity · mapped topic

• H10W20/089

  Electricity · mapped topic

• H10P50/73 Primary

  Electricity · mapped topic

• H01L21/76816

  Electricity · mapped topic