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Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradient
US9070580B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070580-B2 |
| Application number | US-201313874895-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 1, 2013 |
| Priority date | May 1, 2013 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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Abstract
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A super junction structure is formed in a semiconductor portion of a super junction semiconductor device. The super junction structure includes a compensation structure with a first compensation layer of a first conductivity type and a second compensation layer of a complementary second conductivity type. The compensation structure lines at least sidewall portions of compensation trenches that extend between semiconductor mesas along a vertical direction perpendicular to a first surface of the semiconductor portion. Within the super junction structure and a pedestal layer that may adjoin the super junction structure, a sign of a lateral compensation rate changes along the vertical direction resulting in a local peak of a vertical electric field gradient and to improved avalanche ruggedness.
First claim
Opening claim text (preview).
What is claimed is: 1. A super junction semiconductor device comprising: a super junction structure formed in a semiconductor portion, wherein the super junction structure comprises a compensation structure comprising a first compensation layer of a first conductivity type and a second compensation layer of a complementary second conductivity type, the compensation structure lining at least sidewall portions of compensation trenches that extend between semiconductor mesas along a…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9070580B2 cover?
- A super junction structure is formed in a semiconductor portion of a super junction semiconductor device. The super junction structure includes a compensation structure with a first compensation layer of a first conductivity type and a second compensation layer of a complementary second conductivity type. The compensation structure lines at least sidewall portions of compensation trenches that …
- Who is the assignee on this patent?
- Infineon Technologies Austria
- What technology area does this patent fall under?
- Primary CPC classification H10D30/66. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 30 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).