Capacitor from second level middle-of-line layer in combination with decoupling capacitors
US-9478490-B2 · Oct 25, 2016 · US
Integrated circuit with integrated decoupling capacitors
US9070575B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070575-B2 |
| Application number | US-201313953476-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 29, 2013 |
| Priority date | Sep 8, 2011 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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Abstract
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Ferroelectric capacitor structures for integrated decoupling capacitors and the like. The ferroelectric capacitor structure includes two or more ferroelectric capacitors connected in series with one another between voltage nodes. The series connection of the ferroelectric capacitors reduces the applied voltage across each, enabling the use of rough ferroelectric dielectric material, such as PZT deposited by MOCVD. Matched construction of the series-connected capacitors, as well as uniform polarity of the applied voltage across each, is beneficial in reducing the maximum voltage across any one of the capacitors, reducing the vulnerability to dielectric breakdown.
First claim
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What is claimed is: 1. An integrated circuit formed at a semiconducting surface of a substrate, comprising: a plurality of non-volatile memory cells, each memory cell comprising a memory cell capacitor having a capacitor dielectric formed of a ferroelectric material; first and second ferroelectric capacitors, each having a capacitor dielectric formed of the ferroelectric material, disposed between first and second plates, wherein the second plate of the first ferroelectric capac…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D1/62Primary
Electricity · mapped topic
- H10D84/212Primary
Electricity · mapped topic
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- What does patent US9070575B2 cover?
- Ferroelectric capacitor structures for integrated decoupling capacitors and the like. The ferroelectric capacitor structure includes two or more ferroelectric capacitors connected in series with one another between voltage nodes. The series connection of the ferroelectric capacitors reduces the applied voltage across each, enabling the use of rough ferroelectric dielectric material, such as PZT…
- Who is the assignee on this patent?
- Texas Instruments Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D1/62. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 30 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).