Microelectronic assemblies with inductors in direct bonding regions
US-2024355768-A1 · Oct 24, 2024 · US
US9070565B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070565-B2 |
| Application number | US-201314054705-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 15, 2013 |
| Priority date | Oct 17, 2012 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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A power transistor circuit uses first and second power transistors in differential mode. An inductor arrangement of inductors is formed by wire bonds between the drains. The transistors are in a mirrored configuration, and the inductor arrangement comprises wire bonds which extend between the drain connections across the space between the mirrored transistors.
Opening claim text (preview).
The invention claimed is: 1. A power transistor physical circuit layout, comprising: first and second power transistors, each having an elongate rectangular area with gate connections on a gate side of the elongate area and drain connections on an opposite drain side of the elongate area, wherein the drain connections of each transistor connect to a respective output pad enabling use of the two power transistors in a differential amplifier configuration; and an inductor arrang…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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