Proximity mask for ion implantation with improved resistance to thermal deformation

Patent metadata

Field	Value
Publication number	US-9070535-B2
Application number	US-201313926369-A
Country	US
Kind code	B2
Filing date	Jun 25, 2013
Priority date	Jun 25, 2013
Publication date	Jun 30, 2015
Grant date	Jun 30, 2015

Abstract

A proximity mask for ion implantation that is configured to resist thermal deformation in a direction normal to an ion beam projected on and through the mask. The mask may include a frame defining a central aperture and a plurality of ribs disposed within the aperture. The ribs may define a doping pattern and may be configured to deform in a direction normal to an ion beam projected thereon and to resist deformation in a direction orthogonal to an ion beam projected thereon upon being heated. Particularly, at least one of the ribs may include a bridge member, first and second perpendicular support legs extending perpendicularly from the bridge member, and first and second parallel support legs that extend perpendicularly from the first and second perpendicular support legs, respectively. The first and second parallel support legs may be attached to the frame.

First claim

The invention claimed is:

1. A proximity mask for ion implantation, the proximity mask comprising:
a plurality of parallel, spaced apart, ribs connected to a frame;
each of the plurality of ribs including a central bridge member connected at a first end to the frame by a first perpendicular support leg and a first parallel support leg, the first perpendicular support leg extending from the central bridge member in a direction normal to a front surface of the proximity mask, and…

Assignees

• Varian Semiconductor Equipment

Inventors

• Riordon Benjamin B

Classifications

• H01J37/3171 Primary

  Electricity · mapped topic

• G03F1/20

  Physics · mapped topic

• H01J2237/31711

  Electricity · mapped topic