Method for removing oxide film formed on surface of silicon wafer

Patent metadata

Field	Value
Publication number	US-9064809-B2
Application number	US-201313760416-A
Country	US
Kind code	B2
Filing date	Feb 6, 2013
Priority date	Feb 29, 2012
Publication date	Jun 23, 2015
Grant date	Jun 23, 2015

Abstract

Disclosed is a method for removing an oxide film formed on a surface of a silicon wafer, comprising steps of: preparing a silicon wafer having an oxide film formed thereon; arranging a discoid wafer mounting stage, which has a contact portion with the oxide film being formed of an acid-resistant resin layer, in a reaction container of a vapor-phase etching apparatus; mounting the silicon wafer on the mounting stage in such a manner that a wafer center coincides with a central axis of the mounting stage; and circulating a hydrogen fluoride containing gas into the reaction container and removing the oxide film from an interface between a chamfered surface and a wafer lower surface toward the inner side of the wafer until a desired interval a is obtained, wherein the desired interval a is adjusted by changing a stage diameter of the mounting stage.

First claim

What is claimed is:

1. A method for removing an oxide film formed on a surface of a silicon wafer, comprising:
preparing a silicon wafer which has an upper surface, a lower surface, a chamfered surface, and an end surface and has an oxide film formed on at least the entire lower surface of the silicon wafer;
arranging one or more discoid wafer mounting stages, each of which has at least a contact portion with the oxide film being formed of an acid-resistant resin layer, in a rea…

Assignees

• Sumco Corp

Inventors

• Matsuyama Hiroyuki
• Takada Chieko
• Matsuo Junichi
• Komatsu Hiroyuki

Classifications

• H10P50/283 Primary

  Electricity · mapped topic

• H10P50/73

  Electricity · mapped topic

• H10P14/36

  Electricity · mapped topic

• H10P50/642 Primary

  Electricity · mapped topic

• Y10T428/24488

  Cross-Sectional Technologies · mapped topic