Forming a gate by depositing a thin barrier layer on a titanium nitride cap
US-9202697-B2 · Dec 1, 2015 · US
US9064802B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9064802-B2 |
| Application number | US-11335008-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 1, 2008 |
| Priority date | Jun 8, 2007 |
| Publication date | Jun 23, 2015 |
| Grant date | Jun 23, 2015 |
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A method of manufacturing a semiconductor device includes forming a metal oxide on a semiconductor substrate, forming a gate electrode film on the metal oxide, and executing a thermal treatment on the semiconductor substrate provided with the metal oxide and the gate electrode film to crystallize the metal oxide.
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What is claimed is: 1. A method of manufacturing a semiconductor device, comprising: forming a first metal oxide on a substrate, the substrate including a semiconductor material; forming a gate electrode on the first metal oxide; and after the forming of the gate electrode on the first metal oxide, crystallizing the first metal oxide to a second metal oxide by a thermal treatment, wherein the gate electrode includes a first gate electrode layer and a second gate electrode la…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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