Method of manufacturing semiconductor device and semiconductor device having oxide film crystallized by a thermal treatment

US9064802B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9064802-B2
Application numberUS-11335008-A
CountryUS
Kind codeB2
Filing dateMay 1, 2008
Priority dateJun 8, 2007
Publication dateJun 23, 2015
Grant dateJun 23, 2015

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Abstract

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A method of manufacturing a semiconductor device includes forming a metal oxide on a semiconductor substrate, forming a gate electrode film on the metal oxide, and executing a thermal treatment on the semiconductor substrate provided with the metal oxide and the gate electrode film to crystallize the metal oxide.

First claim

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What is claimed is: 1. A method of manufacturing a semiconductor device, comprising: forming a first metal oxide on a substrate, the substrate including a semiconductor material; forming a gate electrode on the first metal oxide; and after the forming of the gate electrode on the first metal oxide, crystallizing the first metal oxide to a second metal oxide by a thermal treatment, wherein the gate electrode includes a first gate electrode layer and a second gate electrode la…

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What does patent US9064802B2 cover?
A method of manufacturing a semiconductor device includes forming a metal oxide on a semiconductor substrate, forming a gate electrode film on the metal oxide, and executing a thermal treatment on the semiconductor substrate provided with the metal oxide and the gate electrode film to crystallize the metal oxide.
Who is the assignee on this patent?
Watanabe Yukimune, Seiko Epson Corp
What technology area does this patent fall under?
Primary CPC classification H10D64/01338. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 23 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).