Semiconductor structure manufacturing method and two semiconductor structures
US-11887854-B2 · Jan 30, 2024 · US
US9064800B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9064800-B2 |
| Application number | US-201314132035-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 18, 2013 |
| Priority date | Dec 22, 2012 |
| Publication date | Jun 23, 2015 |
| Grant date | Jun 23, 2015 |
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A method of fabricating a semiconductor sensor device includes providing a substrate, supporting a source region and a drain region with the substrate, forming an insulator layer above the source region and the drain region, and forming a porous metallic gate region above the insulator layer using plasma enhanced atomic layer deposition (PEALD).
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What is claimed is: 1. A method of fabricating a semiconductor sensor device comprising: providing a substrate; supporting a source region and a drain region with the substrate; forming an insulator layer above the source region and the drain region; and forming a porous metallic gate region above the insulator layer using plasma enhanced atomic layer deposition (PEALD). 2. The method of claim 1 , wherein forming the porous metallic gate region compris…
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