Array substrate and manufacturing method thereof
US-12185597-B2 · Dec 31, 2024 · US
US9064753B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9064753-B2 |
| Application number | US-201414318809-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 30, 2014 |
| Priority date | Oct 17, 2006 |
| Publication date | Jun 23, 2015 |
| Grant date | Jun 23, 2015 |
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An object is to suppress change of a threshold voltage of a transistor in a shift register and to prevent the transistor from malfunctioning during a non-selection period. A pulse output circuit provided in the shift register regularly supplies a potential to a gate electrode of a transistor which is in a floating state so that the gate electrode is turned on during a non-selection period when a pulse is not outputted. In addition, supply of a potential to the gate electrode of the transistor is performed by turning on or off another transistor regularly.
Opening claim text (preview).
What is claimed is: 1. A pulse output circuit comprising: first, second, third, fourth, and fifth transistors; first, second, third and fourth input terminals; and an output terminal; wherein a first electrode of the first transistor is electrically connected to the first input terminal, and a second electrode of the first transistor is electrically connected to the output terminal, wherein a first electrode of the second transistor is configured to be supplied with a first potential, and a second electrode of the second transistor is electrically connected to the output terminal, wherein a first electrode of the third transistor is configured to be supplied with the first potential, a second electrode of the third transistor is electrically connected to a gate electrode of the second transistor, and a gate electrode of the third transistor is electrically connected to the fourth input terminal, wherein a second electrode of the fourth transistor is electrically connected to a second electrode of the fifth transistor, and a gate electrode of the fourth transistor is electrically connected to the second input terminal, and wherein a first electrode of the fifth transistor is electrically connected to the gate electrode of the second transistor, and a gate electrode of the fifth transistor is electrically connected to the third input terminal. 2. The pulse output circuit according to claim 1 , wherein each of the first, second, third, fourth, and fifth transistors comprises silicon. 3. The pulse output circuit according to claim 1 , wherein each of the first, second, third, fourth, and fifth transistors comprises amorphous silicon. 4. The pulse output circuit according to claim 1 , wherein a channel width of the third transistor is larger than a channel width of the fourth transistor and a channel width of the fifth transistor. 5. The pulse output circuit according to claim 1 , wherein the gate electrode of the second transistor is configured to be supplied with a voltage through the fourth transistor and the fifth transistor. 6. The pulse output circuit according to claim 1 , wherein a first electrode of the fourth transistor is electrically connected to a fifth power supply line. 7. A display device comprising: a pixel portion over a substrate; and a driver circuit for driving the pixel portion, the driver circuit comprising an pulse output circuit which comprises: first, second, third, fourth, and fifth transistors; first, second, third and fourth input terminals; and an output terminal; wherein a first electrode of the first transistor is electrically connected to the first input terminal, and a second electrode of the first transistor is electrically connected to the output terminal, wherein a first electrode of the second transistor is configured to be supplied with a first potential, and a second electrode of the second transistor is electrically connected to the output terminal, wherein a first electrode of the third transistor is configured to be supplied with the first potential, a second electrode of the third transistor is electrically connected to a gate electrode of the second transistor, and a gate electrode of the third transistor is electrically connected to the fourth input terminal, wherein a second electrode of the fourth transistor is electrically connected to a second electrode of the fifth transistor, and a gate electrode of the fourth transistor is electrically connected to the second input terminal, and wherein a first electrode of the fifth transistor is electrically connected to the gate electrode of the second transistor, and a gate electrode of the fifth transistor is electrically connected to the third input terminal. 8. The display device according to claim 7 , wherein each of the first, second, third, fourth, and fifth transistors comprises silicon. 9. The display device according to claim 7 , wherein each of the first, second, third, fourth, and fifth transistors comprises amorphous silicon. 10. The display device according to claim 7 , wherein a channel width of the third transistor is larger than a channel width of the fourth transistor and a channel width of the fifth transistor. 11. The display device according to claim 7 , wherein the gate electrode of the second transistor is configured to be supplied with a voltage through the fourth transistor and the fifth transistor. 12. The display device according to claim 7 , wherein a first electrode of the fourth transistor is electrically connected to a fifth power supply line.
Interconnections, e.g. scanning lines · CPC title
having a particular composition, shape or crystalline structure of the active layer · CPC title
having different architectures, e.g. having both top-gate and bottom-gate TFTs · CPC title
wherein the TFTs are in active matrices · CPC title
with field-effect transistors, e.g. MOS-FET · CPC title
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