Manufacturing method for semiconductor structure
US-12165910-B2 · Dec 10, 2024 · US
Deposition of thin film dielectrics and light emitting nano-layer structures
US9064693B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9064693-B2 |
| Application number | US-201013581281-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 1, 2010 |
| Priority date | Mar 1, 2010 |
| Publication date | Jun 23, 2015 |
| Grant date | Jun 23, 2015 |
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Abstract
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Deposition of thin film dielectrics, and in particular for chemical vapor deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride, and/or other silicon compatible dielectrics includes post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g., a silicon source gas. Deposition of silicon containing dielectrics comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g., active layers containing rare earth containing luminescent centers. Doped or undoped dielectric thin films or nano-layer dielectric structures may also be provided for other semiconductor devices.
First claim
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The invention claimed is: 1. A method of fabricating a thin film dielectric structure for a semiconductor device, the method comprising: depositing a first layer on a substrate, wherein the first layer includes a first dielectric material that comprises a dielectric compound of a metal or semiconductor, wherein said depositing a first layer comprises depositing the first layer from a flow of a reactant gas mixture, wherein the flow of the reactant gas mixture includes a flow of a…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P14/69215Primary
Electricity · mapped topic
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- What does patent US9064693B2 cover?
- Deposition of thin film dielectrics, and in particular for chemical vapor deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride, and/or other silicon compatible dielectrics includes post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g., a silicon source gas. Depo…
- Who is the assignee on this patent?
- Noel Jean-Paul, Li Ming, Kirsteen Mgmt Group Llc
- What technology area does this patent fall under?
- Primary CPC classification H10P14/69215. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 23 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).