Low power non-volatile non-charge-based variable supply RFID tag memory
US-11989606-B2 · May 21, 2024 · US
US9064591B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9064591-B2 |
| Application number | US-201213613229-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 13, 2012 |
| Priority date | Sep 23, 2011 |
| Publication date | Jun 23, 2015 |
| Grant date | Jun 23, 2015 |
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A semiconductor device with OTP memory cell includes a first switching unit for transferring a first bias voltage, a first MOS transistor having a first gate coupled to a first gate signal and a first terminal coupled to the first bias voltage by the first switching unit, and a second switching unit for coupling a second terminal of the first MOS transistor to a first bit line.
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What is claimed is: 1. A semiconductor device including an OTP memory cell, comprising: a first switching unit for transferring a first bias voltage in response to a bias enable signal; a first MOS transistor having a first gate coupled to a first gate signal and a first terminal coupled to the first bias voltage by the first switching unit; and a second switching unit for coupling a second terminal of the first MOS transistor to a first bit line in response to a second gate s…
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