Radio-frequency transmission line structures for wireless circuitry based on conductive traces on multiple printed circuits
US-12021290-B2 · Jun 25, 2024 · US
US9059490B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9059490-B2 |
| Application number | US-201314048603-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 8, 2013 |
| Priority date | Oct 8, 2013 |
| Publication date | Jun 16, 2015 |
| Grant date | Jun 16, 2015 |
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Embodiments are directed to a transition structure for interfacing an integrated circuit chip and a substrate, comprising: a co-planar waveguide (CPW) structure formed based on ground-signal-ground (GSG) pads on the integrated circuit chip, a grounded co-planar waveguide (CPWG) structure coupled to the GSG pads, and a microstrip coupled to the CPWG structure.
Opening claim text (preview).
What is claimed is: 1. A transition structure for interfacing an integrated circuit chip and a substrate, comprising: a vertical transmission section configured to bridge two layers of a package between two ground planes; a transmission line formed between the ground planes and connected to a center of the vertical transmission section; a second vertical transmission section coupled to the transmission line and a layer of the package; a plurality of solder connections coupled to the layer of the package; and a microstrip coupled to at least one of the solder connections. 2. The transition structure of claim 1 , wherein the microstrip is coupled to the at least one of the solder connections through a grounded co-planar waveguide structure. 3. The transition structure of claim 1 , wherein the transmission line comprises a stripline. 4. The transition structure of claim 1 , wherein at least one of the vertical transmission section and the second vertical transmission section comprises a quasi-coax section. 5. The transition structure of claim 1 , wherein the substrate comprises a printed circuit board. 6. The transition structure of claim 1 , wherein the transmission line is configured to convey a signal associated with the integrated circuit. 7. The transition structure of claim 6 , wherein the signal is a millimeter wave signal. 8. The transition structure of claim 6 , wherein the at least one solder connection is associated with the signal, and wherein the remainder of the solder connections are associated with a ground. 9. The transition structure of claim 1 , further comprising: a via configured to provide a direct current path to ground. 10. The transition structure of claim 1 , wherein the chip comprises ground-signal-ground pads that create a co-planar waveguide structure that is continued in a second layer of the package. 11. The transition structure of claim 10 , further comprising vias between the second layer and a third layer of the package. 12. The transition structure of claim 1 , wherein the microstrip is tapered. 13. The transition structure of claim 1 , wherein the package is a low temperature co-fired ceramic package.
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
characterised by the relative positions of pads or connectors relative to package parts · CPC title
on active surfaces of flip-chip devices, e.g. underfills · CPC title
comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title
of die-attach connectors · CPC title
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