Gallium lanthanide oxide films
US-2015380240-A1 · Dec 31, 2015 · US
US9059302B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9059302-B2 |
| Application number | US-41862309-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 6, 2009 |
| Priority date | Apr 6, 2009 |
| Publication date | Jun 16, 2015 |
| Grant date | Jun 16, 2015 |
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One or more embodiments relate to a floating gate memory device, comprising: a substrate; a floating gate disposed over the substrate; and a control gate substantially laterally surrounding at least a portion of the floating gate.
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What is claimed is: 1. A floating gate memory device, comprising: a semiconductor substrate; source/drain regions disposed in the semiconductor substrate; a floating gate disposed over the semiconductor substrate, said floating gate disposed over said semiconductor substrate, said floating gate having a floating gate height, a floating gate length, and a floating gate width, said floating gate length being in the direction of a channel length, said floating gate width being in…
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