High electron mobility transistor and method for forming the same
US-12176414-B2 · Dec 24, 2024 · US
Bidirectional transistor with optimized high electron mobility current
US9059239B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9059239-B2 |
| Application number | US-201314090009-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 26, 2013 |
| Priority date | Nov 26, 2012 |
| Publication date | Jun 16, 2015 |
| Grant date | Jun 16, 2015 |
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Abstract
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An apparatus includes a bidirectional hetero junction field-effect power transistor having a gate between conduction electrodes, semiconductor layers, one formed on the other, and the two meeting at an electron gas layer interface, and a reference electrode embedded in one layer. The reference electrode connects to a potential of a zone of the gas layer that is plumb with the reference electrode, A distance between the reference electrode and one conduction electrode and between the gate and that conduction electrode is between 45 and 55% of a distance between the conduction electrodes. A control circuit connected to the reference electrode generates a switching voltage for switching the transistor from a reference electrode voltage, and to apply a control voltage to the gate.
First claim
Opening claim text (preview).
The invention claimed is: 1. An apparatus comprising a bidirectional hetero junction field-effect power transistor and a control circuit, wherein said bidirectional hetero-junction field-effect power transistor comprises a first conduction electrode, a second conduction electrode, a gate, a first semiconductor layer, a second semiconductor layer, and a reference electrode, wherein said gate is placed between said first conduction electrode and said second conduction el…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D30/475Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9059239B2 cover?
- An apparatus includes a bidirectional hetero junction field-effect power transistor having a gate between conduction electrodes, semiconductor layers, one formed on the other, and the two meeting at an electron gas layer interface, and a reference electrode embedded in one layer. The reference electrode connects to a potential of a zone of the gas layer that is plumb with the reference electrod…
- Who is the assignee on this patent?
- Commissariat Energie Atomique
- What technology area does this patent fall under?
- Primary CPC classification H10D30/475. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 16 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).