Semiconductor device having an insulated gate bipolar transistor

Patent metadata

Field	Value
Publication number	US-9059237-B2
Application number	US-201314036637-A
Country	US
Kind code	B2
Filing date	Sep 25, 2013
Priority date	Feb 12, 2013
Publication date	Jun 16, 2015
Grant date	Jun 16, 2015

Abstract

A semiconductor device includes: a first semiconductor region; a second semiconductor region, which is arranged on the first semiconductor region; a third semiconductor region, which is arranged on the second semiconductor region; a plurality of fourth semiconductor regions, each of which is arranged with being spaced from each other on the third semiconductor region; a insulation film arranged on a inner wall of a recess, which extends from upper faces of the fourth semiconductor region to pass through the third semiconductor region and the fourth semiconductor region and reaches the second semiconductor region; a control electrode, a first main electrode, a second main electrode, which is electrically connected to the third semiconductor region and the fourth semiconductor region, wherein a ratio of a width of the recess to a width of the third semiconductor region abutting on the second main electrode is 1 or more.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first semiconductor region, which has a first conductivity type;
a second semiconductor region, which has a second conductivity type and is arranged on the first semiconductor region;
a third semiconductor region, which has the first conductivity type and is arranged on the second semiconductor region;
a plurality of fourth semiconductor regions, each of which has the second conductivity type and is spaced from each…

Assignees

• Sanken Electric Co Ltd

Inventors

• Ogawa Kazuko

Classifications

• H10D12/038 Primary

  Electricity · mapped topic

• H10D12/481 Primary

  Electricity · mapped topic

• H01L29/7397 Primary

  Electricity · mapped topic

• H01L29/66348

  Electricity · mapped topic