Bidirectional two-base bipolar junction transistor operation, circuits, and systems with diode-mode turn-on
US-9203400-B2 · Dec 1, 2015 · US
T-shaped compound semiconductor lateral bipolar transistor on semiconductor-on-insulator
US9059232B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9059232-B2 |
| Application number | US-201314020260-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 6, 2013 |
| Priority date | Jun 13, 2013 |
| Publication date | Jun 16, 2015 |
| Grant date | Jun 16, 2015 |
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- Title
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Abstract
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A base region extends upward from a recessed semiconductor surface of a semiconductor material portion present on an insulator. The base region includes a vertical stack of, an extrinsic base region and an intrinsic base region. The extrinsic base region includes a first compound semiconductor material portion of a first conductivity type and a first dopant concentration. The intrinsic base region includes another first compound semiconductor material portion of the first conductivity type and a second dopant concentration which is less than the first dopant concentration. A collector region including a second compound semiconductor material portion of a second conductivity type opposite of the first conductivity type is located on one side on the base region. An emitter region including another second compound semiconductor material portion of the second conductivity type is located on another side on the base region.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a semiconductor structure comprising: providing a structure including at least one semiconductor material portion laterally surrounded by an isolation structure and located on a surface of a buried insulator layer, wherein a layer of oxide is located on exposed surface of each of said at least one semiconductor material portion and said isolation structure; forming a trench through said layer of oxide and partially into said at least on…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9059232B2 cover?
- A base region extends upward from a recessed semiconductor surface of a semiconductor material portion present on an insulator. The base region includes a vertical stack of, an extrinsic base region and an intrinsic base region. The extrinsic base region includes a first compound semiconductor material portion of a first conductivity type and a first dopant concentration. The intrinsic base reg…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10D10/80. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 16 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).