Multi-stack nanosheet structure including semiconductor device
US-2024023326-A1 · Jan 18, 2024 · US
Forming BEOL line fuse structure
US9059175B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9059175-B2 |
| Application number | US-201113297338-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 16, 2011 |
| Priority date | Nov 16, 2011 |
| Publication date | Jun 16, 2015 |
| Grant date | Jun 16, 2015 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
In one embodiment, the invention provides a back-end-of-line (BEOL) line fuse structure. The BEOL line fuse structure includes: a line including a plurality of grains of conductive crystalline material; wherein the plurality of grains in a region between the first end and a second end include an average grain size that is smaller than a nominal grain size of the plurality of grains in a remaining portion of the line.
First claim
Opening claim text (preview).
What is claimed is: 1. A back-end-of-line (BEOL) line fuse structure, comprising: a single line including a plurality of grains of conductive crystalline material, the single line being the only line; and a region of the single line positioned between a first end and a second end of the single line, wherein the plurality of grains in the region include an average grain size that is smaller than a nominal grain size of the plurality of grains in a portion of the single line positioned between: the region and the first end, and the region and the second end. 2. The BEOL line fuse structure of claim 1 , wherein the conductive crystalline material is copper. 3. The BEOL line fuse structure of claim 1 , wherein the average grain size of the plurality of grains in the region is approximately greater than or equal to a width of the single line. 4. The BEOL line fuse structure of claim 1 , wherein a width of the region between the first end and the second end of the single line is approximately greater than or equal to a width of the portion of the single line positioned between: the region and the first end, and the region and the second end. 5. The BEOL line fuse structure of claim 1 , further comprising a via that connects the single line to another line in a higher wiring level. 6. The BEOL line fuse structure of claim 1 , further comprising a via that connects the single line to an external programming current source. 7. The BEOL line fuse structure of claim 1 , further comprising a contact or via extending from the second end of the single line. 8. The BEOL line fuse structure of claim 7 , wherein the contact connects the single line to a blow FET formed during front-end-of-line processing configured to blow the BEOL line fuse structure in the region between the first end of the single line and the second end of the single line.
Assignees
Inventors
Classifications
- H10W20/493Primary
Fuses, i.e. interconnections changeable from conductive to non-conductive · CPC title
- H10W20/494Primary
changeable by the use of an external beam, e.g. laser beam or ion beam · CPC title
Electricity · mapped topic
Electricity · mapped topic
- H01L23/5258Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9059175B2 cover?
- In one embodiment, the invention provides a back-end-of-line (BEOL) line fuse structure. The BEOL line fuse structure includes: a line including a plurality of grains of conductive crystalline material; wherein the plurality of grains in a region between the first end and a second end include an average grain size that is smaller than a nominal grain size of the plurality of grains in a remaini…
- Who is the assignee on this patent?
- Farooq Mukta G, Kinser Emily R, IBM
- What technology area does this patent fall under?
- Primary CPC classification H10W20/493. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 16 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).