Interconnect with hybrid metallization

Patent metadata

Field	Value
Publication number	US-9059166-B2
Application number	US-201313890560-A
Country	US
Kind code	B2
Filing date	May 9, 2013
Priority date	May 9, 2013
Publication date	Jun 16, 2015
Grant date	Jun 16, 2015

Abstract

An electronic interconnect structure having a hybridized metal structure near regions of high operating temperature on an integrated circuit, and methods of making the same. The hybridized metal structure features at least two different metals in a single metallization level. The first metal is in a region of high operating temperature and the second region is in a region of normal operating temperatures. In a preferred embodiment the first metal includes aluminum and is in a first level metallization over an active area of the device while the second metal includes copper. In some embodiments, the first and second metals are not in direct physical contact. In other embodiments the first and second metals physically contact each other. In a preferred embodiment, a top surface of the first metal is not co-planar with a top surface of the second metal, despite being in the same metallization level.

First claim

What is claimed is:

1. A method comprising:
forming a first interconnect structure in a dielectric layer; and
forming a second interconnect structure in the dielectric layer, the first interconnect structure and the second interconnect structure being formed from different materials; wherein the second interconnect structure is in physical contact with the first interconnect structure;
wherein the first interconnect structure is formed in a region of a structure which experien…

Assignees

• IBM

Inventors

• Filippi Ronald G
• Kaltalioglu Erdem
• Wang Ping-Chuan
• Zhang Lijuan

Classifications

• H10W20/438

  Electricity · mapped topic

• H10W20/435

  Electricity · mapped topic

• H10W20/425

  Electricity · mapped topic

• H10W20/083

  Electricity · mapped topic

• H10W20/077

  Electricity · mapped topic