Semiconductor device and manufacturing method thereof, and transfer sheet and manufacturing method thereof
US-2015357262-A1 · Dec 10, 2015 · US
US9059130B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9059130-B2 |
| Application number | US-201213731716-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 31, 2012 |
| Priority date | Dec 31, 2012 |
| Publication date | Jun 16, 2015 |
| Grant date | Jun 16, 2015 |
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A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing an integrated circuit chip, comprising: forming a device on a substrate; forming a plurality of insulator layers over the device; and forming a heat sink in at least one of the plurality of insulator layers and proximate to the device, wherein the heat sink comprises a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip; wherein th…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Electricity · mapped topic
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