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Semiconductor device and method for manufacturing same
US9059028B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9059028-B2 |
| Application number | US-201013380728-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 21, 2010 |
| Priority date | Jun 25, 2009 |
| Publication date | Jun 16, 2015 |
| Grant date | Jun 16, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
The objective of the present invention is to provide a semiconductor device provided with a resistance-variable element having sufficient switching property and exhibiting high reliability and high densification as well as good insulating property. The present invention provides a semiconductor device comprising a resistance-variable element provided within multiple wiring layers on a semiconductor substrate, wherein the resistance-variable element comprises a laminated structure in which a first electrode, a first ion-conductive layer of valve-metal oxide film, a second ion-conductive layer containing oxygen and a second electrode are laminated in this order, and the wiring of the multiple wiring layers also serves as the first electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a resistance-variable element provided within multiple wiring layers on a semiconductor substrate, the resistance-variable element comprising a first electrode which is entirely embedded in a wiring groove and also serves as a wiring of the multiple wiring layers, a first ion-conductive layer composed of an oxide film of valve-metal on the first electrode, a second ion-conductive layer containing oxygen on the first ion-con…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L27/101Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9059028B2 cover?
- The objective of the present invention is to provide a semiconductor device provided with a resistance-variable element having sufficient switching property and exhibiting high reliability and high densification as well as good insulating property. The present invention provides a semiconductor device comprising a resistance-variable element provided within multiple wiring layers on a sem…
- Who is the assignee on this patent?
- Tada Munehiro, Sakamoto Toshitsugu, Hada Hiromitsu, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H01L27/101. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 16 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).