Integrated circuit with electrostatic discharge protection
US-2024395801-A1 · Nov 28, 2024 · US
Lateral diode compatible with FinFET and method to fabricate same
US9058992B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9058992-B2 |
| Application number | US-201313968950-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 16, 2013 |
| Priority date | Jun 13, 2013 |
| Publication date | Jun 16, 2015 |
| Grant date | Jun 16, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A structure includes a fin having first end and second ends and a substantially intrinsic portion between the first and second ends. The structure further includes a first region of doped semiconductor material disposed on the first end of the fin and a second region of doped semiconductor material disposed on the second end of the fin. The first region has one of the same doping polarity or an opposite doping polarity as the second region. The structure also includes a third region of doped semiconductor material disposed on the intermediate portion of the fin adjacent to the first region and the second region. The third region has a doping polarity that differs from the doping polarity of at least one of the first and second regions and forms a p-n junction with the at least one of the first and second regions.
First claim
Opening claim text (preview).
What is claimed is: 1. A structure, comprising: a semiconductor fin having a first end having a first doping polarity and a second end having the same doping polarity as the first end, the fin further comprising a substantially intrinsic portion in an intermediate portion of the fin between the first end and the second end; a first region of doped semiconductor material disposed on the first end of the fin and a second region of doped semiconductor material disposed on the secon…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D89/611Primary
Electricity · mapped topic
- H01L27/0255Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9058992B2 cover?
- A structure includes a fin having first end and second ends and a substantially intrinsic portion between the first and second ends. The structure further includes a first region of doped semiconductor material disposed on the first end of the fin and a second region of doped semiconductor material disposed on the second end of the fin. The first region has one of the same doping polarity or an…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10D89/611. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 16 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).