Group III-V Device with a Selectively Modified Impurity Concentration
US-2015380497-A1 · Dec 31, 2015 · US
US9058985B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9058985-B2 |
| Application number | US-201314070999-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 4, 2013 |
| Priority date | Feb 22, 2013 |
| Publication date | Jun 16, 2015 |
| Grant date | Jun 16, 2015 |
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A method of manufacturing a graphene laminated structure includes plasma-treating a surface of a hexagonal boron nitride sheet using a fluorine-based gas plasma, depositing the hexagonal boron nitride sheet on a graphene sheet, and forming an insulating layer on a surface of the surface-treated hexagonal boron nitride sheet.
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What is claimed is: 1. A method of manufacturing a graphene laminated structure, the method comprising: plasma-treating a surface of a hexagonal boron nitride sheet using a fluorine-based gas plasma; depositing the hexagonal boron nitride sheet on a graphene sheet; and forming an insulating layer on a surface of the surface-treated hexagonal boron nitride sheet. 2. The method of claim 1 , wherein the plasma-treating includes using at least one gas select…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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