Quantum cascade laser
US-2015357794-A1 · Dec 10, 2015 · US
Quantum cascade lasers with improved performance using interface roughness scattering
US9054497B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9054497-B2 |
| Application number | US-201213624330-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 21, 2012 |
| Priority date | Sep 21, 2011 |
| Publication date | Jun 9, 2015 |
| Grant date | Jun 9, 2015 |
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Abstract
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A quantum cascade laser and method of making are disclosed. The quantum cascade laser includes a plurality stages configured in a cascade structure, each stage having a quantum well emission layer and an injection layer, each stage having an upper laser level and a lower laser level. A scattering barrier is located in the quantum well emission layer, the scattering barrier being positioned such that interface roughness (IFR) scattering at the lower laser level is greater than IFR scattering at the upper laser level. The scattering barrier may be located to maximize IFR scattering for the lower laser level and/or minimize IFR scattering for the upper laser level.
First claim
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What is claimed is: 1. A quantum cascade laser comprising: a plurality stages configured in a cascade structure, each stage having a quantum well emission layer and an injection layer, each stage having an upper laser level and a lower laser level; and a scattering barrier located in the quantum well emission layer, the scattering barrier being positioned such that interface roughness (IFR) scattering at the lower laser level is greater than IFR scattering at the upper laser lev…
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Electricity · mapped topic
Electricity · mapped topic
- H01S5/3402Primary
Electricity · mapped topic
Electricity · mapped topic
- H01S5/2231Primary
Electricity · mapped topic
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- What does patent US9054497B2 cover?
- A quantum cascade laser and method of making are disclosed. The quantum cascade laser includes a plurality stages configured in a cascade structure, each stage having a quantum well emission layer and an injection layer, each stage having an upper laser level and a lower laser level. A scattering barrier is located in the quantum well emission layer, the scattering barrier being positioned such…
- Who is the assignee on this patent?
- Univ Princeton, Univ Johns Hopkins
- What technology area does this patent fall under?
- Primary CPC classification H01S5/3402. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 09 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).