Light-emitting device having photon-lifetime modulation

Patent metadata

Field	Value
Publication number	US-9054492-B2
Application number	US-201313998782-A
Country	US
Kind code	B2
Filing date	Dec 5, 2013
Priority date	Dec 7, 2012
Publication date	Jun 9, 2015
Grant date	Jun 9, 2015

Abstract

The invention provides a semiconductor light-emitting device having a monolithically integrated master laser, such as a distributed-Bragg-reflector (DBR) master laser, and injection-locked ring slave laser with modulated photon lifetime for optical communication beyond 100 GHz.

First claim

What is claimed is:

1. A semiconductor light-emitting device comprising a single-frequency master laser and an injection-lockable slave ring laser monolithically integrated on a substrate, wherein the ring laser is operably associated with a monolithically integrated modulator that modulates photon lifetime of the ring laser.

2. The device of claim 1 , wherein the master laser comprises a distributed-feedback laser or a distributed Bragg-reflector laser.

3. The device of claim 1 , wherein the ring laser is a whistle-geometry ring laser.

4. The device of claim 1 , wherein the ring laser has a diameter less than 100 microns.

5. The device of claim 1 , having a ridge waveguide structure.

6. The device of claim 1 , including an active layer structure comprising at least one quantum-well, quantum dashes, quantum dots, or a bulk active layer.

7. The device of claim 1 , wherein a monolithically integrated injecting waveguide is used to collect light from the master laser and deliver it to the slave ring laser.

8. The device of claim 7 , wherein the monolithically integrated injecting waveguide is used to transfer light from the master laser into the ring laser by directly connecting to the ring laser in whistle geometry.

9. The device of claim 7 , wherein the monolithically integrated injecting waveguide is used to transfer light from the master laser into the ring laser by means of directional waveguide coupling.

10. The device of claim 7 , wherein the monolithically integrated injecting waveguide is rendered transparent to the light emitted by the master laser by means of quantum-well, quantum-dash, or quantum-dot intermixing.

11. The device of claim 1 , further including multiple non-reciprocating curved waveguides branching off from the injecting waveguide between the master laser and the ring laser section and used to suppress any optical feedback from the ring laser to the master laser.

12. The device of claim 1 , further including a monolithically integrated directional waveguide coupler proximate to the ring laser to collect its output.

13. The device of claim 12 , wherein the monolithically integrated outcoupling waveguide is rendered transparent to the light emitted by the ring laser by means of quantum-well, quantum-dash, or quantum-dot intermixing.

14. The device of claim 1 , wherein a direct injection current is applied to the master laser and to the ring laser, and wherein high-speed voltage modulation is applied to the modulator under reverse bias conditions.

15. The device of claim 1 , further including a monolithically integrated photodetector located at the backside of the master laser to monitor the emission from the master laser.

16. The device of claim 15 , wherein a reverse bias voltage is independently applied to the monitoring photodetector.

17. The device of claim 16 , wherein the reverse bias voltage for the monitoring photodetector is electrically isolated from other elements of the device by means of proton implantation.

18. The device of claim 1 , wherein the modulator comprises an electroabsorption modulator.

19. The device of claim 18 , wherein the electroabsorption modulator is integrated into a section of the ring laser cavity.

20. The device of claim 18 , including the electroabsorption modulator in a feedback branch or line so integrated on the substrate as to communicate to the ring laser to collect part of its output and provide modulated feedback to the ring laser.

21. The device of claim 18 , wherein the electroabsorption modulator comprises a traveling-wave electroabsorption modulator.

22. The device of claim 1 , based on InAlAs/AlGaInAs/InP or InGaAs/AlGaInAs/InP materials.

23. A method of injection locking a semiconductor ring laser modulated through photon lifetime, the method comprising:
providing a semiconductor light-emitting device comprising a semiconductor ring laser monolithically integrated on a common substrate with a semiconductor master laser having a frequency selective element, wherein the light output from the semiconductor master laser is used to injection-lock the semiconductor ring laser to the same frequency by delivering light through a monolithically integrated waveguide carrying light from the master laser to the ring laser;
supplying a direct current bias to the master laser such that the master laser output has a power level sufficient to increase the density of photons inside the semiconductor ring laser;
supplying a direct current bias to the semiconductor ring laser and a modulated voltage input signal to a photon-lifetime modulator operably associated with the semiconductor ring laser for emission of light modulated in response to the input signal;
selectively tuning the direct bias currents to the master laser and ring laser in order to establish an injection locking mode of operation of the ring laser; and
adjusting the resonant frequency offset between the master laser and the semiconductor ring laser such as to increase the modulation bandwidth of the ring laser.

Assignees

• Osinski Marek A
• Smolyakov Gennady A
• Stc Unm

Inventors

• Osinski Marek A
• Smolyakov Gennady A

Classifications

• H01S5/125

  Distributed Bragg reflector [DBR] lasers · CPC title

• H01S5/1071 Primary

  Ring-lasers · CPC title

• H01S5/34306

  emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers · CPC title

• H01S5/4006

  Injection locking · CPC title

• H01S5/22

  having a ridge or stripe structure · CPC title