Semiconductor device

Patent metadata

Field	Value
Publication number	US-9054200-B2
Application number	US-201313856452-A
Country	US
Kind code	B2
Filing date	Apr 4, 2013
Priority date	Apr 13, 2012
Publication date	Jun 9, 2015
Grant date	Jun 9, 2015

Abstract

Electric characteristics of a semiconductor device using an oxide semiconductor are improved. Further, a highly reliable semiconductor device in which a variation in electric characteristics with time or a variation in electric characteristics due to a gate BT stress test with light irradiation is small is manufactured. A transistor includes a gate electrode, an oxide semiconductor film overlapping with part of the gate electrode with a gate insulating film therebetween, and a pair of electrodes in contact with the oxide semiconductor film. The gate insulating film is an insulating film whose film density is higher than or equal to 2.26 g/cm 3 and lower than or equal to 2.63 g/cm 3 and whose spin density of a signal with a g value of 2.001 is 2×10 15 spins/cm 3 or less in electron spin resonance.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a gate electrode;
an oxide semiconductor film;
a gate insulating film between the gate electrode and the oxide semiconductor film; and
a pair of electrodes electrically connected to the oxide semiconductor film,
wherein a film density of the gate insulating film is higher than or equal to 2.26 g/cm 3 and lower than or equal to 2.63 g/cm 3 , and
wherein, in the gate insulating film, a spin density of a signal with a g value of 2.001 is 2×10 15 spins/cm 3 or less in electron spin resonance.

2. The semiconductor device according to claim 1 ,
wherein the gate insulating film comprises silicon oxide or silicon oxynitride.

3. The semiconductor device according to claim 1 further comprising an insulating film between the gate electrode and the gate insulating film.

4. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film; and
a first insulating film over the oxide semiconductor film,
wherein a film density of the gate insulating film is higher than or equal to 2.26 g/cm 3 and lower than or equal to 2.63 g/cm 3 ,
wherein, in the gate insulating film, a spin density of a signal with a g value of 2.001 is 2×10 15 spins/cm 3 or less in electron spin resonance,
wherein a film density of the first insulating film is higher than or equal to 2.26 g/cm 3 and lower than or equal to 2.63 g/cm 3 , and
wherein, in the first insulating film, a spin density of a signal with a g value of 2.001 is 2×10 15 spins/cm 3 or less in electron spin resonance.

5. The semiconductor device according to claim 4 ,
wherein the gate insulating film comprises silicon oxide or silicon oxynitride.

6. The semiconductor device according to claim 4 ,
wherein the first insulating film comprises silicon oxide or silicon oxynitride.

7. The semiconductor device according to claim 4 further comprising a second insulating film between the gate electrode and the gate insulating film.

8. The semiconductor device according to claim 4 further comprising a second insulating film over the first insulating film.

9. A semiconductor device comprising:
an insulating film;
an oxide semiconductor film over the insulating film;
a gate insulating film over the oxide semiconductor film; and
a gate electrode,
wherein a film density of the gate insulating film is higher than or equal to 2.26 g/cm 3 and lower than or equal to 2.63 g/cm 3 ,
wherein, in the gate insulating film, a spin density of a signal with a g value of 2.001 is 2×10 15 spins/cm 3 or less in electron spin resonance,
wherein a film density of the insulating film is higher than or equal to 2.26 g/cm 3 and lower than or equal to 2.63 g/cm 3 , and
wherein, in the insulating film, a spin density of a signal with a g value of 2.001 is 2×10 15 spins/cm 3 or less in electron spin resonance.

10. The semiconductor device according to claim 9 ,
wherein the gate insulating film comprises silicon oxide or silicon oxynitride.

11. The semiconductor device according to claim 9 ,
wherein the insulating film comprises silicon oxide or silicon oxynitride.

12. The semiconductor device according to claim 9 further comprising a pair of electrodes electrically connected to the oxide semiconductor film,
wherein the pair of electrodes overlaps with the gate electrode.

13. The semiconductor device according to claim 4 ,
wherein one surface of the oxide semiconductor film is in contact with the gate insulating film, and
wherein another surface of the oxide semiconductor film is in contact with the first insulating film.

14. The semiconductor device according to claim 4 further comprising a pair of electrodes electrically connected to the oxide semiconductor film.

15. The semiconductor device according to claim 9 further comprising a pair of electrodes electrically connected to the oxide semiconductor film.

Assignees

• Semiconductor Energy Lab

Inventors

• Okazaki Kenichi
• Miyamoto Toshiyuki
• Nomura Masafumi
• Hamochi Takashi

Classifications

• H10D30/0312

  characterised by the gate electrodes · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/6704 Primary

  having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device · CPC title

• H10D86/451

  characterised by the compositions or shapes of the interlayer dielectrics · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title