Method for Treating a Semiconductor Wafer
US-2015371858-A1 · Dec 24, 2015 · US
Semiconductor device with laterally varying doping concentrations
US9054151B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9054151-B2 |
| Application number | US-201314053631-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 15, 2013 |
| Priority date | Jul 3, 2012 |
| Publication date | Jun 9, 2015 |
| Grant date | Jun 9, 2015 |
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Abstract
Official abstract text for this publication.
A semiconductor device includes a semiconductor body including a first surface having a normal direction defining a vertical direction, a first n-type semiconductor region arranged below the first surface and having a first maximum doping concentration and a second n-type semiconductor region arranged below the first n-type semiconductor region and including, in a vertical cross-section, two spaced apart first n-type portions each adjoining the first n-type semiconductor region, having a maximum doping concentration which is higher than the first maximum doping concentration and having a first minimum distance to the first surface, and a second n-type portion adjoining the first n-type semiconductor region, having a maximum doping concentration which is higher than the first maximum doping concentration and a second minimum distance to the first surface which is larger than the first minimum distance. A p-type second semiconductor layer forms a pn-junction with the second n-type portion.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising a semiconductor body comprising: a first surface having a normal direction defining a vertical direction; a first n-type semiconductor region arranged below the first surface and having a first maximum doping concentration; wherein the first n-type semiconductor region is devoid of p-type doping; a second n-type semiconductor region arranged completely within the first n-type semiconductor region and comprising, in a ve…
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Classifications
- H10P34/40Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9054151B2 cover?
- A semiconductor device includes a semiconductor body including a first surface having a normal direction defining a vertical direction, a first n-type semiconductor region arranged below the first surface and having a first maximum doping concentration and a second n-type semiconductor region arranged below the first n-type semiconductor region and including, in a vertical cross-section, two sp…
- Who is the assignee on this patent?
- Infineon Technologies Ag
- What technology area does this patent fall under?
- Primary CPC classification H10P34/40. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 09 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).