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Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer

US9054036B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9054036-B2
Application numberUS-201313780456-A
CountryUS
Kind codeB2
Filing dateFeb 28, 2013
Priority dateNov 21, 2012
Publication dateJun 9, 2015
Grant dateJun 9, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of Al x Ga 1-x N (0<x≦1), a first Si-containing layer, a first GaN layer, a second Si-containing layer, and a second GaN layer. The first Si-containing layer contacts an upper surface of the AlGaN layer. The first Si-containing layer contains Si at a concentration not less than 7×10 19 /cm 3 and not more than 4×10 20 /cm 3 . The first GaN layer is provided on the first Si-containing layer. The first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface. The second Si-containing layer is provided on the first GaN layer. The second Si-containing layer contains Si. The second GaN layer is provided on the second Si-containing layer. The functional layer is provided on the stacked body. The functional layer includes a nitride semiconductor.

First claim

Opening claim text (preview).

What is claimed is: 1. A nitride semiconductor device, comprising: a stacked body comprising an AlGaN layer of Al x Ga 1-x N (0<x≦1) having a first upper surface, a first Si-containing layer contacting the first upper surface, the first Si-containing layer comprising Si at a concentration not less than 7×10 19 /cm 3 and not more than 4×10 20 /cm 3 , the first Si-containing layer having a second upper surface, the second upper surface including a first region and a second regio…

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What does patent US9054036B2 cover?
According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of Al x Ga 1-x N (0<x≦1), a first Si-containing layer, a first GaN layer, a second Si-containing layer, and a second GaN layer. The first Si-containing layer contacts an upper surface of the AlGaN layer. The first Si-containing layer contains Si at…
Who is the assignee on this patent?
Toshiba Kk
What technology area does this patent fall under?
Primary CPC classification H10H20/825. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 09 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).