Range sensor and range image sensor

Patent metadata

Field	Value
Publication number	US-9053998-B2
Application number	US-201213415966-A
Country	US
Kind code	B2
Filing date	Mar 9, 2012
Priority date	Mar 2, 2012
Publication date	Jun 9, 2015
Grant date	Jun 9, 2015

Abstract

A range sensor includes a charge generating region, a signal charge collecting region, an unnecessary charge collecting region, a photogate electrode, a transfer electrode, and an unnecessary charge collecting gate electrode. Outer peripheries of the charge generating region extend to sides of a polygonal pixel region except for corner portions thereof. The signal charge collecting region is disposed at a center portion of the pixel region and inside the charge generating region so as to be surrounded by the charge generating region. The unnecessary charge collecting region is disposed in the corner portion of the pixel region and outside the charge generating region. The photogate electrode is disposed on the charge generating region. The transfer electrode is disposed between the signal charge collecting region and the charge generating region. The unnecessary charge collecting gate electrode is disposed between the unnecessary charge collecting region and the charge generating region.

First claim

What is claimed is:

1. A range sensor having a plurality of pixel regions, each pixel region comprising:
a charge generating region configured such that outer peripheries thereof extend to sides of a polygonal pixel region except for corner portions of the pixel region, and configured to generate charges in response to incident light;
a signal charge collecting region disposed at a center portion of the pixel region and inside the charge generating region so as to be surrounded by the charge generating region, and configured to collect the signal charges from the charge generating region;
a corner charge collecting region disposed in a corner portion of the pixel region and outside the charge generating region, and configured to collect charges from a peripheral region of the charge generating region;
a photogate electrode disposed on the charge generating region;
a transfer electrode disposed between the signal charge collecting region and the charge generating region, and configured to cause the signal charges from the charge generating region to flow into the signal charge collecting region in response to an input signal;
a corner charge collecting gate electrode disposed between the corner charge collecting region and the charge generating region, and configured to cause charges from the charge generating region to flow into the corner charge collecting region in response to an input signal; and
a readout circuit for reading out a signal corresponding to a charge quantity accumulated in the signal charge collecting region, the readout circuit located in one corner portion of the pixel region,
wherein the charge generating regions of the plurality of pixel regions are formed integrally and continuous with each other, and
wherein the photogate electrodes of the plurality of pixel regions are formed integrally and continuous with each other.

2. The range sensor according to claim 1 ,
wherein the corner charge collecting regions of the plurality of pixel regions are integrated with each other.

3. The range sensor according to claim 1 ,
wherein the transfer electrodes of the plurality of pixel regions are supplied respective charge transfer signals having different phases.

4. The range sensor according to claim 1 ,
wherein the transfer electrode is supplied a transfer signal which is intermittently given a phase shift at a predetermined timing.

5. The range sensor according to claim 1 ,
wherein a region is located along one side of the pixel region and outside the pixel region; and
the region includes a readout circuit for reading out a signal corresponding to a charge quantity accumulated in the signal charge collecting region.

6. The range sensor of claim 1 ,
wherein the signal charge collecting region is rectangular-shaped when viewed in a plan view, and
the transfer electrode has approximately a polygonal shape.

7. A range image sensor comprising an imaging region including a plurality of units disposed in a one-dimensional or two-dimensional arrangement on a semiconductor substrate and which obtains a range image based on charge quantities output from the units,
wherein each of the units is the range sensor set forth in claim 1 .

8. The range sensor according to claim 1 , further comprising a light-shielding layer having an opening,
wherein the opening is located to correspond to the photogate electrodes and has a shape corresponding to the photogate electrodes.

9. The range sensor according to claim 1 ,
wherein the charge generating regions of the plurality of pixel regions are continuous with each other in row and column directions, and
wherein the photogate electrodes of the plurality of pixel regions are continuous with each other in the row and column directions.

Assignees

• Mase Mitsuhito
• Suzuki Takashi
• HIRAMITSU Jun
• Hamamatsu Photonics Kk

Inventors

• Mase Mitsuhito
• Suzuki Takashi
• HIRAMITSU Jun

Classifications

• G01S17/894 Primary

  Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar · CPC title

• G01S7/4863

  Detector arrays, e.g. charge-transfer gates · CPC title

• G01S17/10

  using transmission of interrupted, pulse-modulated waves (determination of distance by phase measurements G01S17/32) · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/8033

  Photosensitive area · CPC title