Crosspoint nonvolatile memory device and method of driving the same

Patent metadata

Field	Value
Publication number	US-9053787-B2
Application number	US-201314119936-A
Country	US
Kind code	B2
Filing date	Mar 27, 2013
Priority date	Mar 29, 2012
Publication date	Jun 9, 2015
Grant date	Jun 9, 2015

Abstract

The nonvolatile memory device includes a control circuit that controls a sense amplification circuit and a writing circuit. The control circuit changes a value of at least one of (a) a load current and (b) a forming pulse current or a forming pulse voltage, according to a total number of sneak current paths formed by memory cells each including a variable resistance element in a second resistance state having a low resistance value except a selected memory cell in a memory cell array.

First claim

The invention claimed is:

1. A crosspoint nonvolatile memory device comprising:
a plurality of word lines parallel to each other on a first plane;
a plurality of bit lines parallel to each other on a second plane parallel to the first plane, the bit lines three-dimensionally crossing the word lines;
a crosspoint memory cell array including memory cells arranged in rows and columns at respective three-dimensional crosspoints between the word lines and the bit lines, each of the…

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Shimakawa Kazuhiko
• Azuma Ryotaro
• Katoh Yoshikazu
• Kawahara Akifumi

Classifications

• G11C2013/0083

  Physics · mapped topic

• G11C2213/15

  Physics · mapped topic

• G11C2013/0078

  Physics · mapped topic

• G11C13/0069

  Physics · mapped topic

• G11C13/0007

  Physics · mapped topic