Systems and Methods for Producing Carbon Solids
US-2024417566-A1 · Dec 19, 2024 · US
Thin-film manufacturing method and apparatus
US9051644B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9051644-B2 |
| Application number | US-201113243044-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 23, 2011 |
| Priority date | Nov 2, 2010 |
| Publication date | Jun 9, 2015 |
| Grant date | Jun 9, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.
First claim
Opening claim text (preview).
What is claimed is: 1. A DLC thin-film manufacturing method, comprising the steps of: generating a plasma from source gas comprising hydro-carbon series gas; extracting carbon ions from the plasma; and depositing a DLC thin film on at least one side of a substrate to be deposited with the carbon ions, wherein the method is performed in an apparatus having: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion tr…
Assignees
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Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
- C23C16/26Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9051644B2 cover?
- A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion tra…
- Who is the assignee on this patent?
- Katano Tomonori, Taniguchi Katsumi, Teii Kungen, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification C23C16/26. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 09 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).