Precursor sol-gel solution, electromechanical transducer element, liquid droplet discharge head, and inkjet recording apparatus
US-2015307403-A1 · Oct 29, 2015 · US
Method of manufacturing transparent conductive thin film
US9051640B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9051640-B2 |
| Application number | US-201213464177-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 4, 2012 |
| Priority date | May 6, 2011 |
| Publication date | Jun 9, 2015 |
| Grant date | Jun 9, 2015 |
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Abstract
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An embodiment of the disclosed technology discloses a transparent conductive thin film and a method of manufacturing the same. The embodiment of the disclosed technology employs tin (II) oxalate (Sn 2 C 2 O 4 ) as a raw material, acetic acid and ammonia as complex agents to form a neutral complex system with a pH=6.5˜7.5, and trifluoroacetic acid as dopant to form a stable doping of F ions, and has a high doping efficiency.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a transparent conductive thin film, comprising: adding Sn 2 C 2 O 4 into an aqueous solution of acetic acid and then performing stirring to form a suspend system; adding ammonia into the suspend system, and then performing stirring to form a clear solution, wherein a pH value of the clear solution is in the range of 6.5 to 7.5; adding trifluoroacetic acid into the clear solution, and then performing stirring to form a sol syste…
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Operations & Transport · mapped topic
Operations & Transport · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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Frequently asked questions
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- What does patent US9051640B2 cover?
- An embodiment of the disclosed technology discloses a transparent conductive thin film and a method of manufacturing the same. The embodiment of the disclosed technology employs tin (II) oxalate (Sn 2 C 2 O 4 ) as a raw material, acetic acid and ammonia as complex agents to form a neutral complex system with a pH=6.5˜7.5, and trifluoroacetic acid as dopant to form a stable doping of F ions, and…
- Who is the assignee on this patent?
- Liu Tongjun, Boe Technology Group Co Ltd, Hefei Boe Optoelectronics Tech
- What technology area does this patent fall under?
- Primary CPC classification C23C18/1216. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 09 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).