Process for manufacturing a hydrophobic glazing containing a carbon rich silicon oxycarbide tie layer

US9051213B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9051213-B2
Application numberUS-201214358496-A
CountryUS
Kind codeB2
Filing dateNov 14, 2012
Priority dateNov 16, 2011
Publication dateJun 9, 2015
Grant dateJun 9, 2015

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Abstract

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A process for manufacturing a hydrophobic glazing by: (i) forming a carbon-rich SiO x C y layer at a surface of a mineral glass substrate via CVD by contacting the surface with a stream containing C 2 H 4 , SiH 4 , and CO 2 with an C 2 H 4 /SiH 4 ratio of less than or equal to 3.3 by volume, at a temperature of between 600° C. and 680° C.; (ii) forming a SiO 2 layer or a carbon-poor silicon oxycarbide layer with a mean C/Si ratio of less than 0.2 on the carbon-rich SiO x C y layer, thereby obtaining a layered substrate; (iii) annealing and/or shaping the layered substrate at a temperature of between 580° C. and 700° C.; (iv) activating the SiO 2 layer or the carbon-poor silicon oxycarbide layer by plasma treatment or acidic or basic chemical treatment; and (v) grafting, by covalent bonding, a fluorinated hydrophobic agent to the surface of the SiO 2 layer or the carbon-poor silicon oxycarbide layer.

First claim

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The invention claimed is: 1. A process for manufacturing a hydrophobic glazing, the process comprising: forming a carbon-rich silicon oxycarbide (SiO x C y ) layer at a surface of a mineral glass substrate by chemical vapor deposition (CVD) over at least a portion of the surface of the substrate by contacting the surface with a stream of reactive gases comprising ethylene (C 2 H 4 ), silane (SiH 4 ), and carbon dioxide (CO 2 ) with an ethylene/silane (C 2 H 4 /SiH 4 ) ratio by vol…

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What does patent US9051213B2 cover?
A process for manufacturing a hydrophobic glazing by: (i) forming a carbon-rich SiO x C y layer at a surface of a mineral glass substrate via CVD by contacting the surface with a stream containing C 2 H 4 , SiH 4 , and CO 2 with an C 2 H 4 /SiH 4 ratio of less than or equal to 3.3 by volume, at a temperature of between 600° C. and 680° C.; (ii) forming a SiO 2 layer or a carbon-poor silicon…
Who is the assignee on this patent?
Saint Gobain
What technology area does this patent fall under?
Primary CPC classification C03C17/42. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jun 09 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).