Power semiconductor device driving circuit

Patent metadata

Field	Value
Publication number	US-9048829-B2
Application number	US-201414259326-A
Country	US
Kind code	B2
Filing date	Apr 23, 2014
Priority date	Nov 18, 2011
Publication date	Jun 2, 2015
Grant date	Jun 2, 2015

Abstract

A power semiconductor device driving circuit includes a gate control terminal, which is provided at a position separated from a drain terminal of a power semiconductor device by a predetermined distance so that electric discharge is generated between the drain terminal and the gate control terminal at the time of generation of surge. A surge voltage is applied to the gate control terminal due to this discharge, the gate of the power semiconductor device is charged to turn on and absorb the surge energy. Thus it becomes possible to suppress the surge voltage applied to the drain terminal and prevent breakdown of the power semiconductor device.

First claim

What is claimed is:

1. A power semiconductor device driving circuit comprising:
a power semiconductor device formed of a semiconductor switching device, which controls a current supplied to a first terminal and a second terminal based on a gate voltage applied to a gate terminal, the first terminal and the second terminal being a high-side terminal and a low-side terminal;
a gate driving circuit for controlling the gate voltage applied to the gate terminal of the power semicondu…

Assignees

• Denso Corp

Inventors

• Kobayashi Atsushi
• Takasu Hisashi

Classifications

• H03K2217/0045

  Electricity · mapped topic

• H03K17/0822 Primary

  Electricity · mapped topic

• H03K17/08

  Electricity · mapped topic

• H03K2217/0027

  Electricity · mapped topic