Wireless earphone control method, apparatus and electronic device
US-2024365038-A1 · Oct 31, 2024 · US
Radio frequency power amplifier with linearizing predistorter
US9048802B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9048802-B2 |
| Application number | US-201213397917-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 16, 2012 |
| Priority date | Aug 17, 2009 |
| Publication date | Jun 2, 2015 |
| Grant date | Jun 2, 2015 |
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- Title
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Abstract
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A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.
First claim
Opening claim text (preview).
What is claimed is: 1. A power amplifier circuit for a radio frequency (RF) transmitter, the power amplifier circuit comprising: an amplifier metal oxide semiconductor field-effect transistor (MOSFET) having a gate terminal coupled to a first bias voltage and an input voltage signal, a source terminal, and a drain terminal, one of the source terminal and the drain terminal coupled to a reference voltage, and the other of the source terminal and the drain terminal configured to pro…
Assignees
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Classifications
- H03G3/3042Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H03F1/0205Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9048802B2 cover?
- A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined…
- Who is the assignee on this patent?
- Amir Firouzkouhi Hamid R, Agarwal Bipul, Akyol Hasan, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H03G3/3042. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 02 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).