Semiconductor device having a vertical cavity surface emitting laser (VCSEL) and a protection diode integrated therein and having reduced capacitance to allow the VCSEL to achieve high operating speeds

Patent metadata

Field	Value
Publication number	US-9048629-B2
Application number	US-201313925324-A
Country	US
Kind code	B2
Filing date	Jun 24, 2013
Priority date	Jul 31, 2011
Publication date	Jun 2, 2015
Grant date	Jun 2, 2015

Abstract

A semiconductor device is provided that has a VCSEL and a protection diode integrated therein and that has an additional intrinsic layer. The inclusion of the additional intrinsic layer increases the width of the depletion region of the protection diode, which reduces the amount of capacitance that is introduced by the protection diode. Reducing the amount of capacitance that is introduced by the protection diode allows the VCSEL to operate at higher speeds.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate;
a first plurality of layers comprising a semiconductor material disposed on top of the substrate, wherein a first, lower distributed Bragg reflector (DBR) is formed in the first plurality of layers, and wherein at least one of the first plurality of layers is of the first type of semiconductor material;
at least a first intrinsic layer containing a light-emitting material disposed on top of the lower DBR, s…

Assignees

• Avago Technologies General Ip

Inventors

• Murty Ramana

Classifications

• H01S5/04257

  Electricity · mapped topic

• H10W90/00 Primary

  Electricity · mapped topic

• H01S5/0261

  Electricity · mapped topic

• H01S5/06825

  Electricity · mapped topic

• H01S5/18308

  Electricity · mapped topic