Method, system and apparatus for automatically determining operating conditions of a periodically poled lithium niobate crystal in a laser system

Patent metadata

Field	Value
Publication number	US-9048616-B1
Application number	US-201314086538-A
Country	US
Kind code	B1
Filing date	Nov 21, 2013
Priority date	Nov 21, 2013
Publication date	Jun 2, 2015
Grant date	Jun 2, 2015

Abstract

A method, system and apparatus for automatically determining operating conditions of a periodically poled lithium niobate crystal in a laser system are provided. The system comprise: a laser; a periodic poled lithium niobate (PPLN) crystal for receiving laser input from the laser; a temperature control device for adjusting the temperature of the PPLN crystal; a temperature sensor for monitoring the temperature of the PPLN crystal; and a computing device. While the PPLN crystal is receiving laser input, temperature of the PPLN crystal is changed using the temperature control device. The computing device monitors the temperature of the PPLN crystal and corresponding power of the temperature control device during the changing, the temperature monitored using the temperature sensor. The computing device determines one or more of operating conditions of the temperature control device and an operating temperature of the PPLN crystal from a function of the power vs. the temperature.

First claim

What is claimed is:

1. A method comprising:
in a system comprising: a laser; a periodic poled lithium niobate (PPLN) crystal configured to receive laser input from the laser; a temperature control device configured to adjust the temperature of the PPLN crystal; a temperature sensor configured to monitor the temperature of the PPLN crystal; and a computing device:
while the PPLN crystal is receiving laser input from the laser, changing, using the temperature control device, a temperature of the PPLN crystal;
monitoring, at the computing device, the temperature of the PPLN crystal and corresponding power of the temperature control device during the changing, the temperature of the PPLN crystal monitored using the temperature sensor; and,
determining, at the computing device, one or more of operating conditions of the temperature control device and an operating temperature of the PPLN crystal from a function of the power vs. the temperature, the function comprising a slope corrected function of the power vs. the temperature, a constant trend for heating the PPLN crystal one or more of separated and subtracted from the power vs. the temperature.

2. The method of claim 1 , wherein determining one or more of the operating conditions of the temperature control device and the operating temperature of the PPLN crystal from the function of the power vs. the temperature comprises:
one or more of separating and subtracting the constant trend for heating the PPLN crystal from the power vs. the temperature to produce slope-corrected power vs. temperature data; and,
finding one or more of a peak, a maximum and an inflection point in a slope of the slope-corrected power vs. temperature data, the operating conditions of the temperature control device and the operating temperature corresponding to one or more of the peak, the maximum, and the inflection point.

3. The method of claim 1 , wherein the function comprises a sinc 2 function.

4. The method of claim 1 , further comprising:
after one or more of the operating conditions of the temperature control device and the operating temperature of the PPLN crystal have been determined, one or more of operating the PPLN crystal at the operating temperature and operating the temperature control device at the operating conditions.

5. The method of claim 4 , further comprising:
continuing to monitor the temperature of the PPLN crystal and the corresponding power of the temperature control device, and continuing to determine the function of the power vs. the temperature; and,
when a slope of the function changes from a pre-determined slope, adjusting one or more of the operating conditions of the temperature control device and the temperature of the PPLN crystal until the slope changes back to the pre-determined slope.

6. The method of claim 5 , wherein the function comprises a slope corrected function of the power vs. the temperature, a constant trend for heating the PPLN crystal one or more of separated and subtracted from the power vs. the temperature, and the pre-determined slope comprises a zero slope.

7. The method of claim 1 , wherein the changing the temperature comprises one or more of: dithering the temperature about a given temperature; and sweeping the temperature through a given range.

8. The method of claim 7 , further comprising determining one or more of the given temperature and the given range from one or more of:
factory settings for the PPLN crystal;
a previous operating temperature of the PPLN crystal; and,
previous operating conditions for the temperature control device.

9. A system comprising:
a laser; a periodic poled lithium niobate (PPLN) crystal configured to receive laser input from the laser; a temperature control device configured to adjust the temperature of the PPLN crystal; a temperature sensor configured to monitor the temperature of the PPLN crystal; and, a computing device configured to:
while the PPLN crystal is receiving laser input from the laser, change, using the temperature control device, a temperature of the PPLN crystal;
monitor the temperature of the PPLN crystal and corresponding power of the temperature control device during changing of the temperature, the temperature of the PPLN crystal monitored using the temperature sensor; and,
determine one or more of operating conditions of the temperature control device and an operating temperature of the PPLN crystal from a function of the power vs. the temperature, the function comprising a slope corrected function of the power vs. the temperature, a constant trend for heating the PPLN crystal one or more of separated and subtracted from the power vs. the temperature.

10. The system of claim 9 , wherein the computing device is further configured to determine one or more of the operating conditions of the temperature control device and the operating temperature of the PPLN crystal from the function of the power vs. the temperature by:
one or more of separating and subtracting the constant trend for heating the PPLN crystal from the power vs. the temperature to produce slope-corrected power vs. temperature data; and,
finding one or more of a peak, a maximum, and an inflection point in a slope of the slope-corrected power vs. temperature data, the operating conditions of the temperature control device and the operating temperature corresponding to one or more the peak, the maximum, and the inflection point.

11. The system of claim 9 , wherein the function comprises a sinc 2 function.

12. The system of claim 9 , wherein the computing device is further configured to:
after one or more of the operating conditions of the temperature control device and the operating temperature of the PPLN crystal have been determined, one or more of operate the PPLN crystal at the operating temperature and operate the temperature control device at the operating conditions.

13. The system of claim 12 , wherein the computing device is further configured to:
continue to monitor the temperature of the PPLN crystal and the corresponding power of the temperature control device, and continue to determine the function of the power vs. the temperature; and,
when a slope of the function changes from a pre-determined slope, adjust one or more of the operating conditions of the temperature control device and the temperature of the PPLN crystal until the slope changes back to the pre-determined slope.

14. The system of claim 13 , wherein the function comprises a slope corrected function of the power vs. the temperature, a constant trend for heating the PPLN crystal one or more of separated and subtracted from the power vs. the temperature, and the pre-determined slope comprises a zero slope.

15. The system of claim 9 , wherein the computing device is further configured to change the temperature by one or more of: dithering the temperature about a given temperature; and sweeping the temperature through a given range.

16. The system of claim 15 , wherein the computing device is further configured to determine one or more of the given temperature and the given range from one or more of:
factory settings for the PPLN crystal;
a previous operating temperature of the PPLN crystal; and,
previous operating conditions for the temperature control device.

17. The system of claim 9 , further comprising an output coupler, wherein the laser comprises an extended cavity surface emitting laser, the PPLN crystal located between the laser and the output coupler.

18. A computer program product, comprising a computer usable medium having a non-transitory computer readable

Assignees

• Christie Digital Systems Usa

Inventors

• Robinson Wayne

Classifications

• G02F1/0121 Primary

  Operation of devices; Circuit arrangements, not otherwise provided for in this subclass · CPC title

• H01S3/10

  Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating · CPC title

• H01S5/024

  Arrangements for thermal management · CPC title

• H01S3/1003

  tunable optical elements, e.g. acousto-optic filters, tunable gratings · CPC title

• H01S3/109

  Frequency multiplication, e.g. harmonic generation · CPC title