Three dimensional non-volatile storage with asymmetrical vertical select devices

Patent metadata

Field	Value
Publication number	US-9048422-B2
Application number	US-201414269107-A
Country	US
Kind code	B2
Filing date	May 3, 2014
Priority date	Dec 14, 2010
Publication date	Jun 2, 2015
Grant date	Jun 2, 2015

Abstract

A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.

First claim

What is claimed is:

1. A method of fabricating a non-volatile storage apparatus, the method comprising:
adding one or more driver devices and signal lines to a substrate;
adding a select layer above the substrate and above the one or more driver devices and the signal lines, the adding of the select layer including adding select lines and adding asymmetrical vertically oriented select devices; and
adding a monolithic three dimensional array above the select layer, the monolith…

Assignees

• Sandisk 3D Llc

Inventors

• Scheuerlein Roy E

Classifications

• H10N70/8833

  Electricity · mapped topic

• H10N70/823

  Electricity · mapped topic

• H10N70/24

  Electricity · mapped topic

• H10N70/826

  Electricity · mapped topic

• H10N70/066

  Electricity · mapped topic