Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells
US-2024380401-A1 · Nov 14, 2024 · US
Memory element and memory apparatus
US9048416B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9048416-B2 |
| Application number | US-201414456429-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 11, 2014 |
| Priority date | Dec 1, 2011 |
| Publication date | Jun 2, 2015 |
| Grant date | Jun 2, 2015 |
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Abstract
Official abstract text for this publication.
According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure. The magnetization-fixed layer has magnetization parallel or antiparallel to the magnetization direction of the memory layer and comprises a laminated ferripinned structure including a plurality of ferromagnetic layers and one or more non-magnetic layers, and includes a layer comprising an antiferromagnetic material formed on a first ferromagnetic layer of the plurality of ferromagnetic layers and situated between the first ferromagnetic layer and the non-magnetic layer. The tunnel insulating layer is located between the memory layer and the magnetization-fixed layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A layered structure, comprising: a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure; a magnetization-fixed layer having magnetization parallel or antiparallel to the magnetization direction of the memory layer and comprising a laminated ferripinned structure including a plurali…
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Classifications
Physics · mapped topic
- G11C11/161Primary
Physics · mapped topic
Electricity · mapped topic
- H01L43/10Primary
Electricity · mapped topic
- H10N50/10Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9048416B2 cover?
- According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure. The magnetization-fixed layer ha…
- Who is the assignee on this patent?
- Sony Corp
- What technology area does this patent fall under?
- Primary CPC classification G11C11/161. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Jun 02 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).